oxygen vacancy造句

• On the other hand , oxygen plasma treatment makes ito film oxidized further , which decreases the number of oxygen vacancy and sn ~ ( 4 + )
  另一方面,氧等离子体处理使ito薄膜表面的富sn氧化物进一步氧化,形成稳定的sno ,减少了ito薄膜表面的氧空位和sn ~ ( 4 + )数量,使其功函数增大。
• Compared with pl of pure nanotube , the emission peak energy shift value was larger . this may result from the formation of oxygen vacancies in the nanotube during the process of surface - modification
  ( 2 )使用十六醇对纳米管钛酸进行了化学修饰，结果表明纳米管表面与十六醇发生酯化反应。
• The subst - itutional oxygen vacancies and tin contributing to its high conductivity . the high optical transmittance of ito films is a direct consequence of it being a wide band gap ( eg > 3ev )
  Ito结构中的氧空位和锡掺杂使得它具有很强的导电性，较大的能带间隙宽度( e _ g 3ev )使得它具有很强的光透明性。
• The uv - visible absorption spectrum showed the as - prepared aam templates were transparent within visible light , and the pl curve showed the as - prepared aam templates had a blue pl band in wavelength range of 400nm ~ 60qnm which originated from singly ionized oxygen vacancies
  从光致发光特性曲线发现，纳米孔阵列aam在400一600nm之间有一个蓝色发光带，该发光带来源于单离子氧空位。
• In the discussion of visible luminescence mechanism , in order to prove that the oxygen vacancies or defects distribute on the surface of nanocrystallites , we presented to prepare the zno thin films with doped mn and studied the photoluminescence of zno : mn
  在可见发光机制探讨中，为了证明氧空位或缺陷是分布在纳米晶表面，我们提出氧化锌中掺杂锰（ zno ： mn ） ，研究了zno ： mn薄膜的光致发光（ pl ） 。
• It was found from the experiment that , with the increasing of substrate temperature , there were more oxygen vacancies in the films , which lead the conductance of the sample become larger , and the absorb edge of zno thin films shifted toward higher wavelength ; with increasing of ar : o2 ratio , there were lesser oxygen vacancies in the films , which lead the absorb edge of zno thin films shifted toward lower wavelength
  实验还发现，随着衬底温度的升高，薄膜中产生的氧空位将会增多，使得zno薄膜的电导逐渐增大，而且其紫外透射吸收截止边带向高波长方向漂移；随着氩氧比例的增加，薄膜中的氧缺陷相对减少，薄膜的透射吸收截止边向低波长方向漂移。
• It was found from the experiment that , with the increasing of substrate temperature , there were more oxygen vacancies in the films , which lead the conductance of the sample become larger , and the absorb edge of ito thin films shifted toward lower wavelength ; with increasing of ar : o2 ratio , there were lesser oxygen vacancies in the films , which lead the absorb edge of ito thin films shifted toward lower wavelength
  实验还发现，在一定的温度范围内随着衬底温度的升高，薄膜中产生的氧空位将会增多，使得ito薄膜的电导逐渐增大，而且其紫外透射吸收截止边带向短波长方向漂移；随着氩氧比例的增加，薄膜中的氧缺陷相对减少，薄膜的透射吸收截止边向低波长方向漂移。
• The magnitude of the conductivity maximum increases and shifts to lower temperature with increasing sr content . in this paper , the electrical conductivity reaches maximum value at x = 0 . 4 . below the temperature corresponding to the maximum value , the electrical conductivity is found to follow the relationship for the small polaron hopping mechanism , charge compensation of oxygen vacancy dominates electrical conduction at high temperature , and oxygen vacancy acts as traps to catch carriers , resulting in the decrease of carriers concentration and mobility
  通过电学和热学性能测试结果表明，电导率随着sr含量的增加以及温度的变化都出现了极大值，在本论文中，在sr含量为0 . 4时电导率值最大，电导率最大值对应的温度随着sr含量的增加而降低，这是由于在低温下以小极化子导电机理为主，在高温阶段则是氧空位的电荷补偿占据主导作用，氧空位使得载流子的浓度和可动性减弱，从而导致电导率降低。
• With the increase of the amount of al , the intensity of the pl peak at 510nm increases . with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies , and 510nm peak originate from a complex co - function of al , si , and o . el devices have been fabricated on three types of silicon based oxide films ( ge - sio2 films , si - sio2 films , and al - sio2 films )
  用不同的方法制备的51一5102薄膜、 ge一510 :薄膜和al一51一5102薄膜，在较低的电压万均观察到了室温可见电致发光现象，峰位都在510nm左右，其峰位不因薄膜样品内所含颗粒的种类、薄膜的制备方法、偏压及后处理的影响，表明电致发光主要来源于电子和空穴在510 、基质中的发光中心的辐射复合发光。
• By examining the vacancy formation energy of three kinds of defect sno _ 2 ( 110 ) surface , the most energetically favorable defect surface is that the surface possesses the coexistence of bridging and in - plane oxygen vacancies , which is different with the traditional defect model by only removing bridging oxygen
  通过考察形成三种不同类型sno _ 2 ( 110 )缺陷表面的缺陷形成能,结果表明,形成同时具有桥氧和面氧缺陷的构型能量上最为有利,这与通常所认为的桥氧缺陷最为稳定不同。
• Some gas - sensitive test to deoxidizing gas have carried out based on tio _ 2 films by sputtering and doped some impurity . the experimental results showed that tio _ 2 films have different electron injecting principle and reactive mechanism , the behaviors of gas - sensor for hydrogen and ethanol manifest dissimilitude . this is due to that the oxygen vacancies were compensated by the impurity
  用溅射制备的薄膜掺入部分杂质对还原性气体进行气敏测试，发现tio _ 2薄膜对酒精气体和氢气有不同的反应机制和电子注入机理，气敏特性也表现出不同，而杂质的引入反而降低了tio _ 2薄膜的敏感性，可能是由于杂质对氧空位的补偿所引起。
• We also have analyzed the photoluminescence ( pl ) spectra of some zno films , it turns out that the emission of ultraviolet light comes from the radiative recombination of excitons within nano - crystal energy band - gap , and the pl peaks move to smaller wavelength because zn are substituted by fe , co , and cu , which cause the size of the film grains smaller and the effective band - gap bigger . the red emission of zno films is due to , on the one hand , decrease of the film grains size which causes the emission intensity smaller and smaller until it disappears abruptly , on the other hand , the transition of electrons from deep donor level of the oxygen vacancies to the valence band
  另外，我们还对薄膜光致发光性质进行了分析和研究，结果表明：纳米结构zno薄膜的紫外发光来源于带间激子的辐射复合发光， pl谱的带边发射峰发生蓝移是由于fe 、 co 、 cu对zn的替代使薄膜粒子的尺寸减小，使薄膜的有效带隙增宽； zno薄膜的红色发光，一方面是zno颗粒尺寸的减少，带间的激子发射峰越来越弱直至猝灭，另一方面主要是与zno晶格中的o空位有关，由深能级复合发光引起红光发射。
• The charge related to esd can be compensated by oxygen environment , oxygen environment works mainly through making up oxygen vacancy and repairing energy band distortion in time . heating the sample and reducing defect concentration can reduce the charge related to inner defects
  对于样品表面电子受激解吸造成的充电可通过氧环境提供补偿,氧环境主要是通过及时补充氧空位、修复能带扭曲起作用的；对于电子束调制内部缺陷造成的充电可通过加热试样减轻缺陷浓度来补偿。